With characteristics different from monolayer graphene and traditional semiconductor quantum wells, the bilayer graphene (BLG) has unique electronic properties. Applying a potential bias between its two layers by a perpendicular electric field, we can easily open a gap between its conduction and valence band and manipulate those properties [1]. This might imply significant potential for device application. It is expected that the electric screening and plasmon modes of electron gas play an important role in determining the properties of BLG as observed in monolayer graphene [2] and traditional semiconductor nanostructures. We study electronic correlation, electric screening, and collective excitations of electrons in bilayer graphene [3].
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