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Improvement in Triplet Exciton Confinement of Electrophosphorescent Device Using Fluorinated Polymer Host

机译:使用氟化聚合物基质改善电致磷光器件的三重态激子限制

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Host materials for phosphorescence organic light-emitting diodes (OLEDs) are required to have wide energy gap to prevent back energy transfer and confine triplet exciton on guest molecules. Carbazole (Cz) has been widely used as a building block for host materials because of its relatively high energy gap. We found that the energy gap of Cz can be widened by fluorination at specific positions. A characteristic of the energy gap widening by fluorination is its controllability by the number and position of fluorine substituents. We synthesized 2,7-difluorocarbazole (F-Cz) and estimated the energy gap of Cz and F-Cz from absorption spectra to be 3.59 eV and 3.71 eV, respectively. To confirm the wide-gap effect of F-Cz on OLED device, we synthesized a solution-processable polymer host, poly(N-vinyl-2,7-difluorocarbazole) (F-PVK), which has F-Cz as pendant groups, and compared it with poly(N-vinylcarbazole) (PVK). The OLED devices investigated consisted of an ITO/PEDOT:PSS/EML/CsF/Al multilayered structure. The poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) layer was spin-coated onto an indium tin oxide (ITO) coated glass substrate. Subsequently, the emission layer (EML) composed of PVK or F-PVK, 1,3-bis[(4-tert-butylphenyl)-l,3,4-oxidiazolyl]phenylene (OXD-7), and a blue phosphorescent dopant, iridium(III)bis [(4,6-di-fluorophenyl)-pyridinato-N,C2'] picolinate (Flrpic) was spin-coated, and the CsF and Al layers were vapor-deposited. The OLED device with F-PVK showed 1.8 times higher maximum current efficiency (27 cd/A) than that with PVK (15 cd/A). The improved efficiency of F-PVK device can be rationalized by the enhanced triplet confinement effect of polymer host composed of fluorinated carbazole.
机译:要求磷光有机发光二极管(OLED)的主体材料应具有较大的能隙,以防止反向能量转移并将三重态激子限制在客体分子上。咔唑(Cz)由于其相对较高的能隙,已被广泛用作主体材料的构建基块。我们发现,通过在特定位置进行氟化,可以扩大Cz的能隙。通过氟化作用使能隙变宽的特征是其通过氟取代基的数量和位置的可控制性。我们合成了2,7-二氟咔唑(F-Cz),并根据吸收光谱估计Cz和F-Cz的能隙分别为3.59 eV和3.71 eV。为了确认F-Cz在OLED器件上的宽间隙效应,我们合成了可溶液加工的聚合物主体,聚(N-乙烯基-2,7-二氟咔唑)(F-PVK),其中F-Cz为侧基,并将其与聚(N-乙烯基咔唑)(PVK)进行比较。所研究的OLED器件由ITO / PEDOT:PSS / EML / CsF / Al多层结构组成。将聚(3,4-乙撑二氧噻吩)聚(苯乙烯磺酸盐)(PEDOT:PSS)层旋涂到涂有铟锡氧化物(ITO)的玻璃基板上。随后,发射层(EML)由PVK或F-PVK,1,3-双[(4-叔丁基苯基)-1,3,4-氧杂唑基]亚苯基(OXD-7)和蓝色磷光掺杂剂组成旋涂铱(III)双[(4,6-二氟苯基)-吡啶基-N,C2']吡啶甲酸酯(Flrpic),并气相沉积CsF和Al层。具有F-PVK的OLED装置显示的最大电流效率(27 cd / A)是具有PV-PVK的OLED装置(15 cd / A)的1.8倍。 F-PVK装置效率的提高可以通过提高由氟化咔唑组成的聚合物主体的三重态限制效应来合理化。

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