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Nonmctallic Inclusions in Solar Cell Silicon: Focusing on Recycling of Scraps

机译:太阳能电池硅中的非金属夹杂物:专注于废料的回收

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The solar grade silicon ingot produced from directional solidification process usually pushes the impurities to the top and finally cut off and discarded, which leads to material loss. The hard inclusions lead to wire breakages during the cutting of the ingot in wafers. The main kinds of inclusions found in solar grade silicon have been investigated using vacuum filtration: needle-like Si_3N_4 and lumpy SiC inclusions. Clusters of SiC inclusions and Si_3N_4 are also found. Surface observations of the scraps before polishing reveals that Si_3N_4 inclusions are usually bigger and in some cases can be about a few millimeters. SiC inclusions are usually smaller, ~200μm but can be ~500μm in some cases. Inclusions observed after filtration are mainly SiC with diameters ~10μm. Through the vacuum filtration, 99% inclusions can be removed 99%. The possible mechanisms of filtration are cake filtration for the larger sized Si_3N_4 and SiC inclusions and deep-bed filtration the SiC inclusions. For the directional solidified silicon ingot, an approximate distance of ~10mm gave an encouraging cutoff thickness. The inclusions sizes were below 10μm.
机译:定向凝固过程产生的太阳能级硅锭通常会将杂质推到顶部,最后被切断并丢弃,从而导致材料损失。硬质夹杂物在切割晶圆中的晶锭时会导致断线。已使用真空过滤研究了太阳能级硅中发现的主要夹杂物:针状Si_3N_4和块状SiC夹杂物。还发现了SiC夹杂物和Si_3N_4的簇。抛光前对废料的表面观察表明,Si_3N_4夹杂物通常较大,在某些情况下可能约为几毫米。 SiC夹杂物通常较小,约为200μm,但在某些情况下可能约为500μm。过滤后观察到的夹杂物主要是直径约10μm的SiC。通过真空过滤,可以去除99%的夹杂物。过滤的可能机制是对较大尺寸的Si_3N_4和SiC夹杂物进行饼状过滤,以及对SiC夹杂物进行深床过滤。对于定向凝固的硅锭,约10mm的距离给出了令人鼓舞的截止厚度。夹杂物尺寸小于10μm。

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