Analysis and fabrication of a new two dimensional near infrared pincushion silicon based PSD

摘要

A new photoelectric model of silicon based position sensitive detector (PSD) is built and the formulas of the photocurrent and spectral response are got with it. The effect of every layer thickness and SiO_2 thickness to the spectral response is analysis and calculation. The spectral response of PSD is affected by the thickness of p layer mainly at short wavelength and by the thickness of the depletion layer mainly at long wavelength. With the results, a new silicon based near infrared two dimensional pincushion PSD is designed and fabricated. Some necessary tests show that the peak spectral sensitivity of our device is 0.626A/W at 920nm wavelength.