The Properties of Amorphous Carbon Nitride Thin FilmsGrown by Surface Wave Microwave Plasmawith Various Methane Gas Pressures

摘要

The influence of the methane gas (CH4) pressure on the surface morphology, optical and electrical properties of amorphouscarbon nitride (a-CNx) thin films grown by surface wave microwave plasma was investigated using UV-visible spectroscopyand 4-point probe resistance measurement. The optical and electrical properties of a-CNx films are found to stronglydependent on the CH4 gas sources. The resistivity, ρ of a-CNx films decrease with higher CH4 gas partial pressure up to 8.0× 103, 4.0 × 103 and 1.0 × 103 (?-cm) at 10, 15 and 20 ml/min respectively. The a-CNx films grown at higher CH4 gaspressure have relatively high electrical conductivity.