Raman characteristics and electrical conductance of doublecoaxial carbon nanotubes with N-doped and B-doped multiwalls

摘要

Double coaxial carbon nanotubes with outer N-doped and inner B-doped multiwalls have been prepared by the templatetechnique as previously reported. In this study, the authors employed Raman and electrical conductance measurements toidentify the different electronic structures of the N-doped and B-doped multiwalls. It is apparent that N-doped and B-dopedlayers are characterized by varied electronic structures due to the different charge transfer process in N-doped or B-dopedlayer, proved by the different interaction between electron and photon in Laser Raman scattering. Correspondingly, theelectrical conductance is also varied from N-doped to B-doped layers. These findings provide solid proofs for the coaxialformation of different electronic structure in the as-preared materials.