MULTIPLE-LEVEL-DEFECT MEASUREMENTS USING FUNDAMENTAL FREQUENCY DEEP LEVELTRANSIENT SPECTROSCOPY: A NEW MEASUREMENT TECHNIQUE

摘要

A first principles analysis, of two multiple-level-defect systems, yields differential rate equations fromwhich a multiple-defect-level solution, derived without approximation, is applied to the experimental analysis oflevel depth. In terms of semiconductor material characterization, this exact solution including the full set of carrier transitions is shown to provide more detailed information on multiple level depths than the existing theory, which relies on the assumptions of carrier emission-only and independent single levels. A new defect level measurement technique, namely fundamental frequency deep level transient spectroscopy, is proposed based on this multiple-level theory.