From SIS to SNS Nb based junctions:a different approach to the development of high speed devices for superconductive eleetronics

摘要

This paper describe a technology which can be seen as the extension of the most develooed low temperature superconductor technology:the Nb/Al-AlOx/Nb SIS junction fabrication process. The maia point is the combination of an aluminum barrier thick enough to affect the interface between the two niobium electrodes and the presence of an aluminum oxide used to stabilize this interface. This oxide makes the process reliable also at low deposition rate of the alumiaum,and,compared to a pure Nb/Al/Nb SNS,can give reproducible junctions with high characteristic voltage and a regular magnetic field depeadence. We have measured the dependence of the I-V:characterusitic for these junctions increasing the aluminum layer thickness from 10nm up to 100 nm and changing the barrier transparency．