VALIDATION OF A PROCEDURE FOR TRANSLATION OF LABORATORY MEASUREMENTS ON AMORPHOUS SILICON DEVICES TO REAL OPERATING CONDITIONS

摘要

The response of amorphous silicon (a-Si) devices is different to crystalline technology. This paper gives a method for the investigation of a-Si devices using a device physics based parametric model. The aim of the paper is to describe a wide variety of operating conditions with a single set of parameters, thus the dependence of some parameters on the environment is investigated. A model for the thermal variation of the diode saturation current is given and irradiation is modelled by its effective irradiation, i.e. the irradiation within the spectrally useful range for the devices. Based on these modifications, a fitting-based method for the extraction of the underlying parameters is presented. This gives a very accurate method for the description of cell behaviour over a wide range of operating conditions. The results for some cells are discussed.