Defect Engineering of Silicon Crystal Growth: A Case Study in Mesoscale Modeling of Transport Processes

摘要

In the last several decades, chemical engineering science in the United States has emphasized a curriculum in fundamentals of microscopic transport processes, chemical thermodynamcis, and chemical kinetics, couple dwith a strong component of analysis and systems synthesis . One of the major themes of this decade is that this education prepares a chemical engineer to work in and make major impacts on a wide range of technologies. Quantitative analysis of microscopic transport processes is emphasized when numericla methods are used to simulate and analyze modern material processing microscopic properties of the product. The purpose of this talk is to demonstrate the applicability of this hypothesis through the research of our group at MIT working on analysis and optimization of the quality of single-crystal silicon grown by the Czochralski crystal growth method.