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ON THE ELECTRON DENSITY IN GRAPHENE LAYERS: AN APPROXIMATION TO A PREDICTION OF CARBON REACTIVITY

机译:石墨烯层中的电子密度:预测碳反应性的一种近似方法

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Over the last few years, modeling of carbon gasification reactivity has entered a new phase, which has been made possible not only by the advances in computational quantum chemistry [1] but also by progress in experimental studies. Indeed, much has been accomplished in the last few decades to eliminate empiricism from kinetic treatments of gasification reactions. However, our ability to further quantify the important details of carbon reactivity is now at a critical juncture. The experimental determination of active and reactive surface areas -- while now straightforward in principle [2,3] -- is complicated by stringent accuracy requirements because the active sites, and especially the reactive ones, are often a very small subset of the total surface area of the carbon material. The experimental measurements that are available suggest that the turnover frequency at the free carbon sites -- while largely independent of carbon type -- is dependent not only on temperature but also on the extent of carbon burnoff. This induced heterogeneity effect is difficult to quantify experimentally and it is on this key issue that carbon kineticists can (and should!) seek the help of computational quantum chemists. Before attempting to analyze theoretically the kinetics of interactions between a gaseous molecule (O_2, NO, CO_2, H_2O) and the carbon surface, it is necessary to evaluate the theory in terms of its consistency with some well known facts about the electronic structure and surface chemistry of graphene layers. At the same time, it is expected that such a theoretical analysis will clarify the key details of this electronic structure and thus help with the more accurate quantification of gasification reactivity. The electron density within the graphene sheet and at its edges -- particularly its sensitivity to oxygen surface coverage -- is of immediate interest. The affinity of the carbon surface for an oxidizing gas is assumed to be dependent on the electron density at the free carbon sites. The propensity for product formation (e.g., CO and CO_2 desorption) is dependent on the C-C bond strength, which in turn is governed by the electron density in the graphene layers. The objective of this paper is to make an initial contribution in this field. In our previous studies, both semi-empirical and ab initio methods have been used to evaluate the electron densities in graphene layers by considering 1-, 2-, 4- and 7-ring systems. Here we pay special attention to edge termination of such model compounds for the graphene layers as well as to the criteria for selecting the most appropriate spin multiplicities.
机译:在过去的几年中,碳气化反应性的建模进入了一个新的阶段,不仅由于计算量子化学的进步[1],而且由于实验研究的进展而成为可能。实际上,在过去的几十年中,在消除气化反应动力学处理中的经验主义方面已经取得了许多成就。但是,我们进一步量化碳反应性重要细节的能力现在处于关键时刻。活性和反应性表面积的实验确定(虽然原则上现在很简单[2,3])由于严格的精度要求而变得复杂,因为活性部位,尤其是活性部位通常只占总表面积的很小一部分碳材料的面积。可用的实验测量表明,游离碳位点的周转频率虽然很大程度上与碳的类型无关,但不仅取决于温度,而且取决于碳的燃烧程度。这种诱导的异质性效应很难通过实验进行量化,而在这个关键问题上,碳动力学家可以(并且应该!)寻求计算量子化学家的帮助。在尝试从理论上分析气态分子(O_2,NO,CO_2,H_2O)与碳表面之间相互作用的动力学之前,有必要先评估该理论与某些有关电子结构和表面的已知事实的一致性,然后对其进行评估。石墨烯层的化学性质。同时,预计这种理论分析将阐明该电子结构的关键细节,从而有助于更准确地量化气化反应性。石墨烯片内部及其边缘的电子密度-特别是其对氧表面覆盖的敏感性-引起了人们的直接关注。假定碳表面对氧化性气体的亲和力取决于自由碳位处的电子密度。产物形成的倾向(例如,CO和CO 2解吸)取决于C-C键强度,而C-C键强度又由石墨烯层中的电子密度决定。本文的目的是在这一领域做出初步的贡献。在我们以前的研究中,半经验方法和从头算方法都已被用于通过考虑1环,2环,4环和7环系统来评估石墨烯层中的电子密度。在这里,我们特别注意这些模型化合物在石墨烯层上的边缘终止,以及选择最合适的自旋多重性的标准。

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