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Magnetic Field Dependence of Critical Current Density of NbTi Thin Films as a Parameter of Angle

机译:NbTi薄膜的临界电流密度的磁场依赖性作为角度参数

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摘要

As a parameter of magnetic field angle with respect to the film plane of a NbTi sample, the relationship between critical current density J_c and the field is investigated experimentally. The J_c values of the thin films having thicknesses of 26nm, 50nm, and 120nm are measured at various angles, changing the strength of the magnetic field up to 7T at 4.2K. It is found that the decrease of J_c affected by the field is suppressed by increasing the thickness of the films irrespective of the angle. The influence of angle on the magnetic field strength dependence of J_c for various thicknesses is also discussed.
机译:作为相对于NbTi样品的薄膜平面的磁场角的参数,实验研究了临界电流密度J_c与磁场之间的关系。在不同角度下测量厚度分别为26nm,50nm和120nm的薄膜的J_c值,从而在4.2K时将磁场强度改变到7T。已经发现,通过增加膜的厚度而不受角度的影响,抑制了受电场影响的J_c的减小。还讨论了角度对各种厚度J_c的磁场强度依赖性的影响。

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