In this paper, we briefly describe the lithography developments known as RET (Resolution Enhancement Technologies), which include off-axis illumination in litho tools, Optical and Process Correction (OPC), and phase shifting masks (PSM). All of these techniques are adopted to allow ever smaller features to be reliably manufactured, and are being generally adopted in all manufacturing below 0.25 microns. However, their adoption also places certain restrictions on layouts. We explore these restrictions, and then provide suggestions for layout practices that will facilitate the use of these technologies, especially the generation of a clean target layout for use as input layers for photomask preparation, and the use of verification tools that use process simulation.
机译:PEEC法研究大电流整流器的物理布局对电流分配和磁场的影响
机译:批发和零售电价影响对澳大利亚可再生能源目标(RET)的分配影响
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机译:RET对物理布局的影响
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机译:ret对物理布局的影响
机译:基于优化的组织结构设计指挥中心的信息空间和物理布局