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Experimental Flow Field Investigations Downstream a Film Cooling Scheme Over a Flat Plate Using the PIV Technique

机译:使用PIV技术在平板上下游薄膜冷却方案下游的实验流场研究

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This paper presents experimental investigations of the flow field characteristics downstream a Scaled-Up Micro-Tangential Jet (SUMTJ) film cooling scheme using the Particle Image Velocimetry (PIV) technique over a flat plate. The SUMTJ scheme is a shaped scheme designed so that the secondary jet is supplied tangentially to the surface. The scheme combines the thermal benefits of tangential injection and the enhanced material strength of discrete holes schemes, compared with continuous slot schemes. The flow field characteristics downstream one row of holes were investigated at three blowing ratios, 0.5, 1.0 and 1.5, calculated based on the scheme exit area. A density ratio of unity, a Reynolds Number of 1.16E+5 and an average turbulence intensity of 8%, were used throughout the investigations. The performance of the SUMTJ scheme was compared to that of the circular hole scheme, based line case, at the same test conditions and blowing ratios. From the investigations, it was noticeable that the SUMTJ scheme jet stays attached to the surface for long downstream distances at all investigated blowing ratios. Moreover, the lateral expansion angles of the scheme help perform a continuous film from adjacent jets close to the schemes exits; however, they have bad impact on the uniformity of the film thickness in the lateral direction. The vorticity strength downstream the SUMTJ scheme in the y-z plane was much less than the vorticity strength downstream the circular scheme at all blowing ratios. However, the vorticity behavior in the shear layer between the secondary SUMTJ scheme jet and the mainstream was changing dramatically with blowing ratio. The latter is expected to have a significant impact on the film cooling performance enhancement with blowing ratio increase.
机译:本文介绍了在平板上使用颗粒图像速度(PIV)技术下游的流场特征的实验研究。 SUMTJ方案是设计成形方案,使得二次射流切向于表面。与连续槽方案相比,该方案结合了切向注射的热益处和离散孔方案的增强材料强度。在基于该方案出口区域计算的三个吹气比,0.5,1.0和1.5下,研究了下游一排孔的流场特征。在整个研究中使用了统一的密度比,雷诺数为1.16e + 5,平均湍流强度为8%。将SUMTJ方案的性能与圆形孔方案,基于线壳体的性能进行比较,在相同的测试条件和吹出比率下。从调查中,显着的是,SUMTJ方案喷射在所有调查的吹风比上长度下游距离保持在表面上。此外,该方案的横向膨胀角有助于从接近的方案的相邻喷射进行连续薄膜;然而,它们对横向方向上的膜厚度的均匀性产生不良影响。在Y-Z平面中的SUMTJ方案下游的涡度强度远小于所有吹风比的圆形方案下游的涡度强度。然而,辅助SUMTJ方案射流和主流之间的剪切层中的涡度行为随着吹出比而变化。预计后者对薄膜冷却性能提高具有显着影响,吹入比率增加。

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