Subpicosecond time-resolved Raman studies of ballistic electron transport in InP

摘要

Electron ballistic transport and in a InP-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T $EQ 300 K. The time-evolution of electron distribution, electron drift velocity has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n $CNGR 5 $MUL 10$+16$/ cm$+$MIN@3$/, electrons travel quasi- ballistically - electron drift velocity increases linearly with time, during the first 150 fs. After 150 fs it increases sublinearly until reaching the peak value at about 300 fs. The electron drift velocity then decreases to its steady-state value.