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VCSEL arrays for 10-Gb/s multimode fiber optical interconnects

机译:VCSEL阵列为10 GB / S多模光纤光学互连

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In this paper, we report on some transmitter and optical fiber technologies for 10 Gb/s speed datacom systems. Primarily to enable direct flip-chip integration with silicon CMOS circuits for highly parallel interchip interconnects, we have fabricated 2D vertical-cavity surface-emitting laser arrays featuring 4*8 elements on a 250 $mu@m pitch. Arrays emitting in the 980 nm spectral region exhibit excellent homogeneity and operation data like 0.8 mA threshold current, below 1.5 V threshold voltage, 1 mW output power at 2 mA current, and more than 35 percent conversion efficiency in the 2 to 5 mW power range. Bottom emission of 850 nm arrays is enabled by etching holes into the opaque GaAs substrate. Due to less efficient heat removal, devices are currently limited to about 2 mW light output at 6 mA current. Top-emitting 850 nm array elements have been employed for high-speed data transmission experiments. First we describe the characteristics of a new 50 $mu@m core diameter silica multimode fiber that allows for 10 Gb/s data rate operation over a record distance of 1.6 km. Finally, a 9 Gb/s transmission experiment over 100 m length of a rather promising perfluorinated plastic optical fiber for low-cost data links is presented.
机译:在本文中,我们报告了10 GB / S速度数据系统的一些发射器和光纤技术。主要是为了实现与硅CMOS电路的直接倒装芯片集成,用于高度平行的间隔互连,我们已经制造了2D垂直腔表面发射激光器阵列,在250 $ MU @ M音高上具有4 * 8个元素。在980nm光谱区域中发出的阵列表现出优异的均匀性和操作数据,如0.8 mA阈值电流,低于1.5 V阈值电压,在2 mA电流为1 MW输出功率,2至5 MW功率范围内超过35%的转换效率。通过将孔蚀刻到不透明的GaAs基板中,使能底部发射850nm阵列。由于较低的散热较低,设备目前限制在6 mA电流下约2 MW光输出。已经采用了高速数据传输实验的顶部发射850nm阵列元件。首先,我们描述了新的50 $ MU @ M核心直径二氧化硅多模光纤的特性,可允许10 GB / s的数据速率运行超过1.6公里。最后,提出了9 GB / S的传输实验,超过100米的全氟化塑料光纤,用于低成本数据链路。

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