A Novel MCT Structure For Power Integrated Cirluits

摘要

A novel MOS Controlled Thyristor(MCT) structure suitable for Power Integrated Circuits is proposed and predicted performance from simulation are reported. The novel MCT stuctre has the features of: 1) an LIGBT cell structure to control the tum 'on' of the MCT cells; 2) many MCI cells which are paraleled in a fashion similar to the conventional MCT structure; 3) the turn off using a second tunm off gate which shorts the anode of the main thyristor. The advantage of the novel strucre(termed the LIGBT-MCT) includes compatibility for laterl power integration, vertical current flow to realise high current density power integration and breakdown voltage controlled by the RESURF principle. The maximum controllable current of the LIGBT-MCT is similar to that of state-of-aft discrete MCTs