First demonstration of nanosecond photon timing in the near-infrared with InGaAs/InP detectors

摘要

We show that SAGM InGaAs/InP Avalanche Photodiodes, cooled at 200K, detect the arrival time of single photons with nanosecond resolution. Hole trapping at the heterointerface impairs the performance of presently available devices. However, a proper design of the structure for low temperature operation is expected to improve their timing performance well below the nanosecond limit.