We have studied the effect of technological parameters on the performances of an ultrashort Si-NMOS transistor, at room temperature, using 2D Monte Carlo simulation. Results obtained for a device with source-drain extensions are compared with experiments. Doping profiles of Gaussian form are assumed. The main physical phenomena involved in the device behaviour are described. Additionally, electrical characteristics are analysed (trnsconductance, threshold voltage, cut-off frequency). Transconductance of 600mS/mm and intrinsic cut-off frequency close to 300Ghz are obtained for a NMOS structure with optimized source drain extensions and 0.07ÃÂÿm gate length.
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