首页> 外文会议>Solid State Device Research Conference, 1993. ESSDERC '93 >Use of Electrothermal Simulation to Analyze Thermal Breakdown on N+/P/P+ Diode During ESD Pulse
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Use of Electrothermal Simulation to Analyze Thermal Breakdown on N+/P/P+ Diode During ESD Pulse

机译:使用电热仿真分析ESD脉冲期间N + / P / P +二极管的热击穿

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Electrothermal simulators are efficient tools to study ElectroStatic Discharge (ESD) problems. We use the numerical 2D simulator TMA-MEDICI [1] to simulate electrothermal problems. We propose here an analysis of thermal breakdown occurrence observed on a PIN diode under reverse ESD pulse. Experimental studies and analytical models have already been proposed [2,3,4]. Nevertheless, simulations coupled with experimental results allowed the study of the failure mode evolution. This new approch led to a better understanding of the main physical mechanisms involved in thermal breakdown phenomenon.
机译:电热模拟器是研究静电放电(ESD)问题的有效工具。我们使用数值2D模拟器TMA-MEDICI [1]来模拟电热问题。我们在这里建议对在反向ESD脉冲下在PIN二极管上观察到的热击穿现象进行分析。实验研究和分析模型已经提出[2,3,4]。尽管如此,通过模拟和实验结果相结合,可以研究失效模式的演变。这种新方法使人们对热击穿现象所涉及的主要物理机制有了更好的了解。

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