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Multipulse degradation of fused silica surfaces at 351 nm

机译:熔融二氧化硅表面在351 nm下的多集水劣化

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We investigate the multipulse degradation of fused silica surfaces exposed at 351 nm for up to 10~9 pulses at pulse fluences greater than 10 J/cm~2. In vacuum, the transmission loss increases as a function of the number of shots at low pulse intensity. However, as the pulse intensity increases, the transmission loss decreases and is not measureable above a certain intensity. Transmission loss is highest when measured at shorter wavelengths, and decreases towards the IR. Absorption is the primary mechanism that leads to transmission loss and is from photo-reduction of the silica surface.
机译:我们研究了在351nm处暴露的熔融二氧化硅表面的多集劣化,在脉冲流量大于10J / cm〜2的脉冲流量下。在真空中,变速器损耗随着低脉冲强度的截图的函数而增加。然而,随着脉冲强度的增加,传输损耗降低并且不可测量以上的某个强度。当以较短波长测量时,传输损耗最高,并且朝向IR降低。吸收是导致透射损耗的主要机制,并且来自二氧化硅表面的光降低。

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