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Improving the accuracy of entrance dosimetry measurements for dose modeling

机译:提高剂量模型的入口剂量测量的准确性

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Due in part to measurement positional uncertainties, the entrance region of depth-ionization curves has challenged beam modelers - thus this region is often ignored in beam modeling despite the valuable dosimetric information contained within. In a previous work, for a single ionization chamber (IC), we demonstrated a method to reduce the positional uncertainty by scanning the IC beyond the water surface into the air and using the ionization inflection point to determine the water surface location. This study extends the previously developed surface location method to eleven additional cylindrical IC designs and investigates the functional dependencies of the inflection point. For the ICs studied, the relative in-air response is related to the ICs wall mass thickness. The inflection point is found to be invariant within measurement resolution (0.5 mm) to changes in beam energy, electron contamination, and field size. Inflection point locations are found to be strongly dependent on IC outer radius, with weaker dependencies on wall thickness and material composition. The inflection point determination technique is useful for accurately determining absolute IC position. Measurements taken with this improved positional accuracy should serve as more accurate inputs to treatment planning system dose calculation algorithms and as more accurate benchmarks for Monte Carlo beam model verification.
机译:部分由于测量位置的不确定性,深度电离曲线的入口区域对射束建模人员提出了挑战-因此,尽管其中包含有价值的剂量信息,但在射束建模中通常会忽略该区域。在先前的工作中,对于单个电离室(IC),我们展示了一种方法,该方法可通过将IC扫描到水面以外并进入空气中并使用电离拐点确定水面位置来减少位置不确定性。这项研究将先前开发的表面定位方法扩展到了11种其他的圆柱IC设计,并研究了拐点的功能依赖性。对于所研究的IC,空气中的相对响应与IC的壁厚有关。发现拐点在测量分辨率(0.5毫米)内对于束能量,电子污染和场大小的变化是不变的。发现拐点位置很大程度上取决于IC的外径,而对壁厚和材料成分的依赖性较小。拐点确定技术对于准确确定绝对IC位置很有用。以这种提高的位置精度进行的测量应作为治疗计划系统剂量计算算法的更准确输入,并作为蒙特卡洛束模型验证的更准确基准。

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