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Characteristics of anodic sulfide films for passivation of HgCdTe photodiodes

机译:HGCDTE光电二极管钝化阳极硫化物膜的特征

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摘要

sulfides were grown on HgCdTe using different electrolyte concentrations and current densities. These sulfide films were characterized by film thickness, refractive index, and composition depth profile. The results demonstrate a strong dependence of film properties on the extent of electrolyte polarization. By enhancing the polarization effect during anodization high quality sulfide/HgCdTe interfaces, and thus satisfactory electrical characteristics, are obtained.
机译:使用不同的电解质浓度和电流密度在HGCDTE上生长硫化物。这些硫化物膜的特征在于膜厚度,折射率和组成深度分布。结果表明,薄膜性质对电解质极化程度的强烈依赖性。通过在阳极氧化期间提高阳极化效果,得到高质量的硫化物/ HGCDTE接口,从而获得令人满意的电特性。

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