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Dielectric properties of silicone liquid films

机译:硅酮液膜的介电性能

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The dielectric properties of silicone liquid films having the thickness of 5 to 10 µm have been measured in the viscosity range from 2 to 1000 CS, temperature range from −60°C to 150°C and frequency range from 30 to 10 Hz. The results have shown that [1] the frequency dependence of relative dielectric loss factor ε″ can be expressed by the relation ε″ ∝ ω, where the exponent n is smaller than unity and increases towards unity with increasing temperature, and [2] the value of ε″ is independent of the liquid viscosity and field strength, and [3] the value of ε″ of a thin liquid film exceeds that of a bulk form liquid by 1 or 2 orders of magnitude. These results suggest that the electronic hopping conduction contributes to the dielectric loss behavior of the liquid film. Hopping model of loss is applied to interpret our results. The consideration shows in good agreement with the obtained results that the frequency dependence of ε″ can be qualitatively characterised by the hopping model of loss and the temperature dependence of the exponent n can be quantitatively determined by the ratio of the thickness of the liquid film and the thickness of ionic atmosphere (Debye-length of the screening charges) surrounding a hopping charge.
机译:已经在2至1000CS的粘度范围,-60℃至150℃的温度范围和30至10Hz的频率范围内测量了具有5至10μm的厚度的有机硅液体膜的介电性能。结果表明:[1]相对介电损耗因子ε''的频率依赖性可以由关系ε''∝ω表示,其中指数n小于1,并且随着温度的升高而趋向于单位,而[2] ε″的值与液体粘度和场强无关,并且[3]薄液膜的ε″的值比本体液体的ε″的值大1或2个数量级。这些结果表明电子跳跃传导有助于液膜的介电损耗行为。损失的跳跃模型被用来解释我们的结果。该考虑与所获得的结果很好地吻合,可以通过损耗的跳跃模型来定性地描述ε''的频率依赖性,并且可以通过液膜的厚度与厚度之比来定量地确定指数n的温度依赖性。围绕跳变电荷的离子气氛的厚度(屏蔽电荷的德拜长度)。

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