First generation of 650V super junction devices with R_(DS(on))A values below 1 Ωmm~2 – Best efficiency that keeps the ease-of-use and enables higher power ratings and frequencies.

摘要

This paper will describe CoolMOS? C7, Infineon’s newest high-voltage Super-junction MOSFET technology developed for hard switching applications. The technical achievements of this new generation of CoolMOS? will be addressed in detail, including how the improved characteristics improve performance in typical applications. A direct comparison of technological characteristics and application performance will be made between CoolMOS? C7 and existing CoolMOS? series, as well as with some key competitors.