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12 kV RCRSD RCRSD-Based Solid State Switch with Ultra Ultra-High Current Rise Rates and High Power Density

机译:12 kV RCRSD RCRSD基固态开关,具有超高电流上升速率和高功率密度

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This paper presents development results of 12 kV switch on the base of reverse switched dynistors with reverse conductance and control unit for current pulse commutation with magnitude up to 100 kA and 20 mus duration by current rate of rise over 25 kA/mus. The switch has been developed as coaxial stack for volume minimization and low inductance, oscillation avoiding during commutation of power current pulses with high switching speeds. The power stack includes 7 connected in series 2 2-inch 2,4 kV press-pack dynistors and saturation core inductor. All semiconductors are controlled with high voltage generator that forms triggered current pulse 2 kA and 1,5 mus duration. This switch design can realize power density of 22 22,5 MW/dm dm(exp 3) and 31 MW/kg.
机译:本文介绍了在反向开关达到底座上的12 kV开关的开发结果,具有反向电导和控制单元,用于电流脉冲换数,幅度高达100 ka和20亩的持续时间超过25 ka / mus。 该开关已经开发为同轴堆叠,用于体积最小化和低电感,振动在具有高开关速度的电源电流脉冲中避免。 功率堆叠包括串联2串2英寸2,4 kV压力机达到动板和饱和核心电感器。 所有半导体都是用高压发生器控制的,形成触发电流脉冲2ka和1,5亩持续时间。 该开关设计可以实现222,5 MW / DM DM(EXP 3)和31 MW / kg的功率密度。

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