An ultra-high level second-order nonlinear optical susceptibilities in strained asymmetric GaN-A1GaN-A1N quantum well applicable for integrated optical component design

摘要

In this paper an asymmetric structure for enhancement of second-order nonlinear optical susceptibilities in the strained asymmetric GaN-A1GaN-A1N QW is proposed. In this structure, the strain-induced spontaneous and piezoelectric effects have been taken into account, and the second-order optical susceptibility of the δ -doped step QW structure have been analyzed by considering the Shrodinger-Poisson self-consistent for different Al mole fraction x, step position, and pump photon energy hω .The magnitudes of the results show an enhancement more than 400 times compared with traditional strained QWs.