Analysis of ACPR performance for memoryless predistorter considering power amplifier memory effects

摘要

Memory effects in a power amplifier (PA) limit the improvement of performance for predistortion linearizers based on memoryless look-up table (LUT) or model-based architectures. This paper investigates degradation of the adjacent channel power ratio (ACPR) improvement for a PA with memoryless predistortion linearizer with respect to the memory effects. Using the input and output complex envelope signals of PA, the ACPR degradation due to memory effects is analytically extracted. A 170 W PEP LDMOS PA is measured and its ACPR performance degradation due to memory effects is analyzed using a memoryless predistortion linearizer.