Temperature-Dependent Carrier Recombination Processes in Nanocrystalline Si/SiO2 Multi-Layers Studied by Time-Resolved and Time-Integrated Photoluminescence

摘要

In this study, ion beam sputtering deposition (IBSD) has been used to fabricate 50-period SiO₂/SiO_x multilayers, which have been subsequently annealed to form Si nanocrystals (NCs) in the SiO_x layer. We report interesting correlation of temperature-dependent integrated PL intensity with the PL lifetime at each x value (NC size) and discuss possible mechanisms to explain the experimental results