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The temperature dependence of threshold voltage and mobility of polysilicon thin film transistors on flexible stainless steel foil and quartz substrates

机译：柔性不锈钢箔和石英基板上的阈值电压与多晶硅薄膜晶体管迁移率的温度相关性

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《》|2001年|P.89-92|共4页
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Afentakis; T.; Hatalis; M.;
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中图分类无线电电子学、电信技术;
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1. Effects of mechanical strain on laser crystallized polysilicon thin film transistors and ring oscillators fabricated on stainless steel foil [J] . Abbas Jamshidi-Roudbari, Po-Chin Kuo, Miltiadis Hatalis Solid-State Electronics . 2008,第10期

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2. Threshold Voltage Uniformity Enhancement for Low-Temperature Polysilicon Thin-Film Transistors Using Tilt Alignment Technique [J] . Szu-I Hsieh, Hung-Tse Chen, Yu-Cheng Chen Electrochemical and solid-state letters . 2006,第7期

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3. Effect of mechanical strain on mobility of polycrystalline silicon thin-film transistors fabricated on stainless steel foil [J] . Po-Chin Kuo, Abbas Jamshidi-Roudbari, Miltiadis Hatalis Applied Physics Letters . 2007,第24期

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4. The temperature dependence of threshold voltage and mobility of polysilicon thin film transistors on flexible stainless steel foil and quartz substrates [C] . Afentakis T., Hatalis N. Electromagnetic Compatibility Symposium Record, 1968 IEEE . -1

机译：柔性不锈钢箔和石英基板上的阈值电压与多晶硅薄膜晶体管迁移率的温度相关性
5. Organic thin-film transistors: Characterization and integration on low temperature substrates for flexible electronics [D] . Gowrisanker, Srinivas 2009

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The temperature dependence of threshold voltage and mobility of polysilicon thin film transistors on flexible stainless steel foil and quartz substrates

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