A novel technique for behavioral modeling of the second generation switched-current building block circuits

摘要

The proposed models are capable of capturing not only the ideal behavior of switched-current circuits, but also the non-ideal behavior, which includes the charge injection effect, device mismatch effect, and finite output conductance effect. In order to evaluate the accuracy of these models, a time domain behavioral simulator SIsim is developed, in which high-order effects of errors are considered. Compared with the traditional simulator SPICE, the behavioral modeling error of SIsim is less than 1.0% while the behavioral simulation speed is 3 to 4 orders higher in time-domain.