Application of a statistical design methodology to low voltage analog MOS integrated circuits

摘要

The statistical design of the four-MOSFET structure and the 10-bit current division network is presented in this paper. The quantitative measure of the effect of mismatch between the transistors in both circuits is provided. Optimization of transistor W and L values, and yield enhancement are demonstrated. The circuits are fabricated through the MOSIS 2 /spl mu/m process using MOS transistor Level-3 model parameters. The experimental results are included in the paper.