A 1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer for Personal Handy-phone System terminals

摘要

This paper describes new single-chip RF front-end GaAs MMIC for 1.9 GHz Japanese PHS handheld terminals. The IC consists of a high power amplifier, a T/R switch, a low noise amplifier, a newly developed low distortion cascode FET mixer and a negative voltage generator for FET gate bias voltage. The IC has high performance as an RF front-end for PHS terminals.