A true enhancement mode heterojunction FET has been developed for low voltage, high efficiency power amplifier applications. A 12 mm wide/spl times/1.0 /spl mu/m gate length device-with no additional circuitry-and only a single voltage supply of 3.5 V exhibited a power output of +31.5 dBm with 75% power-added efficiency at a power gain of 11.6 dB at 850 MHz.
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