Characterization of a 14' /spl times/ 17' flat panel detector based on ion shower doped a-Si:H PIN diodes

摘要

In recent years it has become technically and economically feasible to use solid-state detector technology to display, store, and transfer X-ray images. In this paper we report the performance of a 33 /spl times/ 41 cm/sup 2/ amorphous silicon flat panel detector based on an ion shower doped P-I-N photodiode/TFT array. The p-layer of diode is formed by an ion shower doping method instead of the conventional plasma enhanced chemical vapor deposition method. Measurements of X-ray imaging performances are reported with respect to the general imaging metrics, such as modulation transfer function, noise power spectrum, and detective quantum efficiency.