MEMS, Ka-band single-pole double-throw (SPDT) switch for switched line phase shifters

摘要

Ka-band MEMS doubly anchored cantilever beam capacitive shunt devices are used to demonstrate a MEMS SPDT switch fabricated on high resistivity silicon (HRS) utilizing finite ground coplanar waveguide (FGC) transmission lines. The SPDT switch has an insertion loss (IL), return loss (RL), and isolation of 0.3 dB, 40 dB, and 30 dB, respectively, at Ka-band.