Bi-Directional Isolated DC-DC Converter for Next-Generation Power Distribution - Comparison of Converters using Si and SiC Devices

摘要

In this paper two bi-directional DC-DC converters for a 1MW next-generation BTB system of a distribution system, as it is applied in Japan, are presented and compared with respect to design, efficiency and power density. One DC-DC converter applies commercially available Si-devices and the other one high voltage SiC switch, which consists of a SiC JFET cascode (MOSFET+1 JFET) in series with five SiC JFETs. In the comparison also the high frequency, high voltage transformer, which ensures galvanic isolation and which is a core element of the DC-DC converter, is examined in detail by analytic calculations and FEM simulations. For validating the analytical considerations a 20kW SiC DC-DC converter has been designed in detail. Measurement results for the switching and conduction losses have been acquired from the SiC and also for a Si system for calculating the losses of the scaled 1MW system.