Robustness of readout devices for Si-based quantum computing

摘要

In various Si-based quantum computer (QC) architectures the single electron transistor (SET) has been proposed for qubit state readout. Using a metal double dot device the effects of misalignment and linewidth variation on device performance were investigated. Results from computational modeling, coupled with experiment, indicates that misalignment affects the bias required to transfer an electron across the double dot, while linewidth variation influences the SET sensitivity.