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Spin polarized tunneling at room temperature in a heusler compound - a non-oxide material with a large negative magnetoresistance effect in low magnetic fields

机译：Heusler化合物在室温下自旋极化隧穿-一种在低磁场中具有较大负磁阻效应的非氧化物材料

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《》|2002年|P.317-317|共1页
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Block; T.; Felser; C.; Windela; J.;
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中图分类无线电电子学、电信技术 ;
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3. Low-density spin-polarized transport in two-dimensional semiconductor structures: Temperature-dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field [J] . S. Das Sarma, E. H. Hwang Physical review. B, Condensed Matter And Materials Physics . 2005 ,第20期

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4. Spin polarized tunneling at room temperature in a Heusler compound - a non-oxide material with a large negative magnetoresistance effect in low magnetic fields [C] . T. Block, C. Felser, J. Windeln IEEE International Magnetics Conference . 2005

机译：在Heusler化合物的室温下自旋偏振隧道 - 一种非氧化物材料，在低磁场中具有大的负磁阻效应
5. Heusler Compound Heterostructures and Epitaxial Magnetic Tunnel Junctions for Spintronic Applications [D] . McFadden, Anthony P. 2017

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6. Termination layer compensated tunnelling magnetoresistance in ferrimagnetic Heusler compounds with high perpendicular magnetic anisotropy [O] . Jaewoo Jeong, Yari Ferrante, Sergey V. Faleev, -1

机译：具有高垂直磁各向异性的亚铁磁Heusler化合物中的终止层补偿隧穿磁阻
7. Influence of Sintering Temperature on Low-field Spin-polarized Tunneling Magnetoresistance of La_0.7Ca_0.3MnO₃ [O] . Pham Thanh Phong, Do Hung Manh, Le Van Hong, 2008

机译：烧结温度对La _{0.7 Ca _{0.3 Mno _{3 的低场旋转偏振磁阻的影响}}}

Spin polarized tunneling at room temperature in a heusler compound - a non-oxide material with a large negative magnetoresistance effect in low magnetic fields

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