The RAD750/sup TM/-a radiation hardened PowerPC/sup TM/ processor for high performance spaceborne applications

摘要

BAE SYSTEMS has developed the RAD750/sup TM/, a fully licensed radiation hardened implementation of the PowerPC 750/sup TM/ microprocessor, based on the original design database. The processor is implemented in a 2.5 volt, 0.25 micron, six-layer metal CMOS technology. Employing a superscalar RISC architecture, processor performance of 240 million Dhrystone 2.1 instructions per second (MIPS) at 133 MHz is provided, while dissipating less than six watts of power. The RAD750 achieves radiation hardness of 1E-11 upsets/bit-day and is designed for use in high performance spaceborne applications. A new companion ASIC, the Power PCI, provides the bridge between the RAD750, the 33 MHz PCI backplane bus, and system memory. The Power PCI is implemented in a 3.3 volt, 0.5 micron, five-layer metal CMOS technology, and achieves radiation hardness of >1E-10 upsets/bit-day. This paper describes the implementation of both designs.