High-performance, manufacturable avalanche photodiodes for 10 Gb/s optical receivers

摘要

We describe an InGaAs-InP avalanche photodiode employing a shaped diffusion profile and floating guard rings. High gain-bandwidth products (85 to 95 GHz), 10 GHz peak bandwidths, high gains (50 to 100), and good gain uniformity (/spl plusmn/4%) are demonstrated.