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Electron emission observations from as-grown and vacuum-coated chemical vapor deposited diamond

机译:从成年和真空镀膜化学气相沉积金刚石观察电子发射

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Field emission has been observed from Chemical Vapor Deposited (CVD) diamond grown on Mo and Si substrates. Emission was observed at fields as low as 20 kV/cm. The samples were tested in the as-grown form, and after coating with thin films of Au, CsI and Ni. The emission current was typically maximum at the onset of the applied field, but was unstable, and decreased rapidly with time from the as-grown films. Thin Au layers, /spl sim/15 nm thick, vacuum deposited onto the diamond samples significantly improved the stability of the emission current at values approximately equal to those from uncoated samples at the onset of the applied field. Thin layers of CsI, /spl sim/5 nm thick, were also observed to improve the stability of the emission current but at values less than those from the uncoated samples at the onset of the applied field. While, Au and Csl improved the stability of the emission, Ni was observed to have no effect.
机译:已观察到生长在Mo和Si衬底上的化学气相沉积(CVD)金刚石的场发射。在低至20 kV / cm的电场处观察到发射。样品以生长后的形式进行测试,并涂覆有Au,CsI和Ni薄膜。发射电流通常在外加电场开始时最大,但不稳定,并且随着时间的增长而从成膜开始迅速下降。真空沉积在金刚石样品上的/ spl sim / 15 nm厚的薄Au层显着提高了发射电流的稳定性,其值大约等于施加电场开始时未涂覆样品的发射电流。还观察到CsI薄层,厚度为/ spl sim / 5 nm,可改善发射电流的稳定性,但其值小于施加电场开始时未涂覆样品的值。尽管Au和Csl改善了发射的稳定性,但观察到Ni没有作用。

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