A miniaturized Ka-band MMIC high-gain medium power amplifier in coplanar line technique by using a conventional 0.5 /spl mu/m MESFET technology

摘要

This paper presents a miniaturized Ka-band MMIC high-gain medium power amplifier in coplanar line technique by using a conventional 0.5 /spl mu/m GaAs-MESFET technology. To our knowledge a MESFET amplifier with 7 dB gain at Ka-band has never been shown before. In the frequency band 26.3 GHz to 28.3 GHz, the input and output return losses are better than 10 dB. The 1 dB compression point P/sub 1dB/ is higher than 23 dBm at 26.5 GHz. The single ended one-stage amplifier occupies a chip-size of 0.46/spl times/0.64 mm/sup 2/.