It is demonstrated that thermal resistances of SOI MOSFETs obtained by two different methods (gate resistance thermometry and small-signal drain conductance) show very good agreement. This confirms that the full device temperature rise can be associated with a single thermal time constant. Hence, the time constant of the order of 1 /spl mu/s seen in the measurements is the dominant effect on self-heating for all practical purposes. The comparison shows that both techniques yield good results; the drain conductance technique has the further advantage that standard transistors may be used.
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机译：结果表明，通过两种不同的方法（栅极电阻测温法和小信号漏极电导率）获得的SOI MOSFET的热阻显示出很好的一致性。这证实了整个器件的温度升高可以与单个热时间常数相关联。因此，在所有实际应用中，在测量中看到的时间常数1 / spl mu / s是对自热的主要影响。比较表明，两种技术均产生了良好的效果。漏极电导技术的另一个优点是可以使用标准晶体管。
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