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Relating local electric field in a ferroelectric capacitor to externally measurable voltages

机译:将铁电电容器中的局部电场与外部可测量电压相关

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The field-dependent polarization model is a commonly proposed model to describe the hysteresis loop of a ferroelectric material. The electric field in the model refers to the local field which varies with position within the ferroelectric film. However, the parameters in the field-dependent polarization are usually extracted based on the macroscopic experimentally averaged field, i.e., applied voltage divided by film thickness. In this work physical quantities such as field, potential, electric displacement and polarization inside the ferroelectric capacitor are obtained by assuming that the capacitor is wholly depleted. The resultant electric field distribution demonstrates the significant difference between the local electric field and the macroscopic average field, indicates that extension of some modeling works is necessary. For the assumption of complete depletion to be valid, a constraint is required upon the film thickness at a given value of doping. A design curve is constructed that shows the maximum allowable film thickness for typical PZT film doping levels in order for the assumption of complete depletion to be valid. The technique presented in this work provides a simple and direct way of relating the macroscopic properties of the capacitor to the actual electric field and potential distribution in the ferroelectric film, furthermore, it will serve as a basis for the C-V modeling of ferroelectric capacitors.
机译:场相关极化模型是描述铁电材料磁滞回线的常用模型。模型中的电场是指局部电场,其随铁电薄膜中的位置而变化。但是,通常基于宏观的实验平均场,即施加的电压除以膜厚,来提取取决于场的极化中的参数。在这项工作中,通过假设电容器完全耗尽,可以获得铁电电容器内部的物理量,例如场,电势,电位移和极化。所得的电场分布证明了局部电场与宏观平均电场之间的显着差异,表明有必要扩展一些建模工作。为了假设完全耗尽是有效的,在给定的掺杂值下要求对膜厚度有限制。构造一条设计曲线,显示出典型PZT薄膜掺杂水平的最大允许薄膜厚度,以使完全耗尽的假设有效。这项工作中提出的技术为将电容器的宏观特性与铁电薄膜中的实际电场和电势分布相关联提供了一种简单直接的方法,此外,它将作为铁电电容器C-V建模的基础。

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