Inductorless monolithic microwave amplifiers with directly cascaded cells

摘要

The design and performance of inductorless cascadable amplifier cells are described. Using an f/sub T/=15 GHz GaAs FET MMIC (monolithic microwave integrated circuit) process, broadband cells using a new additive gain technique were directly cascaded to form a 26-dB-gain, 80-MHz-4.5-GHz amplifier. A multistage narrowband design exhibited 25-dB gain at 3.5 GHz with a 1.6 GHz bandwidth. A compact FET synthetic inductor is compared to square spiral inductors for these designs.