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Non-refreshing dynamic RAM for on-chip cache memories

机译:片上高速缓存的非刷新动态RAM

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It is shown that, by using simple circuit techniques and a few modifications to cache organization, one can effectively eliminate the refreshing requirement of a DRAM. A selective invalidation scheme is employed. Selective invalidation can be implemented with a small (six transistors per subblock) circuit. The performances of the DRAM cache with selective invalidation and an equivalent SRAM cache are compared. The difference in performance is quite small even for large caches using selective invalidation. By replacing the SRAM cache with higher-density DRAM, the area efficiency and overall processor performance can be greatly improved. The miss ratio difference in large caches indicates that there are some cache entries active at intervals greater than the refresh period. This may depend on the referencing behavior of program or data.
机译:结果表明,通过使用简单的电路技术和对缓存组织的一些修改,可以有效消除DRAM的刷新需求。采用了选择性失效方案。选择性无效可以通过小型电路(每个子块六个晶体管)实现。比较了具有选择性失效的DRAM缓存和等效SRAM缓存的性能。即使对于使用选择性失效的大型缓存,性能差异也很小。通过用更高密度的DRAM代替SRAM高速缓存,可以大大提高区域效率和整体处理器性能。大型缓存中的未命中率差异表明存在一些缓存条目,它们的活动间隔大于刷新周期。这可能取决于程序或数据的引用行为。

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