Operating Characteristics of 2-8 GHz GaAs MESFET Amplifiers at Elevated Case Temperatures to 200 Degrees Centigrade

摘要

RF performance of 2-8 GHz amplifiers utilizing GaAs MESFETs which incorporate TiWN diffusion barriers is reported for a case temperature range of -54 to +200°C. Preliminary results of in-process accelerated life tests are also included.