Strong bandwidth-enhancement effect in high-speed GaAs/AlGaAs based uni-traveling carrier photodiode under small photocurrent and zero-bias operation

摘要

Strong bandwidth-enhancement has been observed in GaAs/AlGaAs UTC-PD under small-output-photocurrent (0.4mA) and zero-bias operation. Equivalent-circuit-modeling results indicate that such effect is due to self-induced-field inside absorption layer, which benefits devices' high-speed performance under zero-power-consumption operation.