首页> 外文会议>ISTFA 2010 : Conference proceedings from the 36th international symposium for testing and failure analysis >Combined electron beam induced current imaging (EBIC) and focused ion beam(FIB) techniques for thin film solar cell characterization
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Combined electron beam induced current imaging (EBIC) and focused ion beam(FIB) techniques for thin film solar cell characterization

机译:结合电子束感应电流成像(EBIC)和聚焦离子束 r n(FIB)技术进行薄膜太阳能电池表征

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摘要

A novel analytical method applying combined electron beamrninduced current (EBIC) imaging based on scanning electronrnmicroscopy (SEM) and focused ion beam (FIB) crossrnsectioning in a SEM/FIB dualbeam system is presented. Thernmethod is demonstrated in several case studies for processrncharacterization and failure analysis of thin film technologyrnbased Solar cells, including Silicon (CSG), CadmiumrnTelluride (CdTe) and Copper Indium Selenide (CIS)rnabsorbers. While existing techniques such as electro-,rnphotoluminescence spectroscopy and lock-in thermographyrnare able to locate the larger, electrically active defectsrnreasonably fast on a large area, the FIB-SEM EBIC system isrnuniquely capable of detecting sub-micron, sub-surface defectsrnand of analysing these defects in the same system. Inrncombination with a FIB, the localized region of interest can berneasily cross sectioned and additional EBIC analysis can bernapplied for a three dimensional analysis of the p junction.
机译:提出了一种基于扫描电子显微镜(SEM)和聚焦离子束(FIB)横截面的组合电子束感应电流(EBIC)成像技术在SEM / FIB双光束系统中的新颖分析方法。该方法在基于薄膜技术的太阳能电池的工艺表征和故障分析的几个案例研究中得到了证明,这些案例包括硅(CSG),碲化镉(CdTe)和硒化铜铟(CIS)吸收剂。现有的技术(如电,光致发光光谱法和锁定热成像法)能够在大面积上合理快速地定位较大的电活性缺陷,而FIB-SEM EBIC系统却能够检测亚微米,亚表面缺陷并进行分析这些缺陷在同一系统中。与FIB组合使用时,感兴趣的局部区域可以很容易地横切,并且可以对PN结的三维分析应用其他EBIC分析。

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